Resistance variable memory elements based on polarized...

Details Resistance variable memory elements based on polarized... Resistance variable memory elements based on polarized...

2006-12-26

2006-12-26

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S102000, C257SE21209

Reexamination Certificate

active

07153721

ABSTRACT:
The invention relates to a resistance variable memory element including polarizable metal-chalcogen regions within a doped chalcogenide glass. A method for physically aligning the polarizable metal-chalcogen regions to form a conducting channel is provided. The invention also relates to a resistance variable memory element including metal-chalcogen regions within a chalcogenide glass backbone. The metal-chalcogen regions and glass regions bond to form a conducting channel. In addition, a method of operating such memory elements is provided in which metal ions move in and out of the conducting channels in response to applied voltages, thereby affecting the resistance of the memory elements.

REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3961314 (1976-06-01), Klose et al.
patent: 3966317 (1976-06-01), Wacks et al.
patent: 3983542 (1976-09-01), Ovshinsky
patent: 3988720 (1976-10-01), Ovshinsky
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4267261 (1981-05-01), Hallman et al.
patent: 4597162 (1986-07-01), Johnson et al.
patent: 4608296 (1986-08-01), Keem et al.
patent: 4637895 (1987-01-01), Ovshinsky et al.
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 4664939 (1987-05-01), Ovshinsky
patent: 4668968 (1987-05-01), Ovshinsky et al.
patent: 4670763 (1987-06-01), Ovshinsky et al.
patent: 4673957 (1987-06-01), Ovshinsky et al.
patent: 4678679 (1987-07-01), Ovshinsky
patent: 4696758 (1987-09-01), Ovshinsky et al.
patent: 4698234 (1987-10-01), Ovshinsky et al.
patent: 4710899 (1987-12-01), Young et al.
patent: 4728406 (1988-03-01), Banerjee et al.
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 4766471 (1988-08-01), Ovshinsky et al.
patent: 4769338 (1988-09-01), Ovshinsky et al.
patent: 4775425 (1988-10-01), Guha et al.
patent: 4788594 (1988-11-01), Ovshinsky et al.
patent: 4809044 (1989-02-01), Pryor et al.
patent: 4818717 (1989-04-01), Johnson et al.
patent: 4843443 (1989-06-01), Ovshinsky et al.
patent: 4845533 (1989-07-01), Pryor et al.
patent: 4853785 (1989-08-01), Ovshinsky et al.
patent: 4891330 (1990-01-01), Guha et al.
patent: 5128099 (1992-07-01), Strand et al.
patent: 5159661 (1992-10-01), Ovshinsky et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5335219 (1994-08-01), Ovshinsky et al.
patent: 5341328 (1994-08-01), Ovshinsky et al.
patent: 5359205 (1994-10-01), Ovshinsky
patent: 5406509 (1995-04-01), Ovshinsky et al.
patent: 5414271 (1995-05-01), Ovshinsky et al.
patent: 5534711 (1996-07-01), Ovshinsky et al.
patent: 5534712 (1996-07-01), Ovshinsky et al.
patent: 5536947 (1996-07-01), Klersy et al.
patent: 5543737 (1996-08-01), Ovshinsky
patent: 5591501 (1997-01-01), Ovshinsky et al.
patent: 5596522 (1997-01-01), Ovshinsky et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5694054 (1997-12-01), Ovshinsky et al.
patent: 5714768 (1998-02-01), Ovshinsky et al.
patent: 5825046 (1998-10-01), Czubatyj et al.
patent: 5912839 (1999-06-01), Ovshinsky et al.
patent: 5933365 (1999-08-01), Klersy et al.
patent: 6011757 (2000-01-01), Ovshinsky
patent: 6084796 (2000-07-01), Kozicki et al.
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6339544 (2002-01-01), Chiang et al.
patent: 6404665 (2002-06-01), Lowery et al.
patent: 6429064 (2002-08-01), Wicker
patent: 6437383 (2002-08-01), Xu
patent: 6462984 (2002-10-01), Xu et al.
patent: 6480438 (2002-11-01), Park
patent: 6487113 (2002-11-01), Park et al.
patent: 6501111 (2002-12-01), Lowery
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 6511862 (2003-01-01), Hudgens et al.
patent: 6511867 (2003-01-01), Lowery et al.
patent: 6512241 (2003-01-01), Lai
patent: 6514805 (2003-02-01), Xu et al.
patent: 6531373 (2003-03-01), Gill et al.
patent: 6534781 (2003-03-01), Dennison
patent: 6545287 (2003-04-01), Chiang
patent: 6545907 (2003-04-01), Lowery et al.
patent: 6555860 (2003-04-01), Lowery et al.
patent: 6563164 (2003-05-01), Lowery et al.
patent: 6566700 (2003-05-01), Xu
patent: 6567293 (2003-05-01), Lowery et al.
patent: 6569705 (2003-05-01), Chiang et al.
patent: 6570784 (2003-05-01), Lowery
patent: 6576921 (2003-06-01), Lowery
patent: 6586761 (2003-07-01), Lowrey
patent: 6589714 (2003-07-01), Maimon et al.
patent: 6590807 (2003-07-01), Lowery
patent: 6593176 (2003-07-01), Dennison
patent: 6597009 (2003-07-01), Wicker
patent: 6605527 (2003-08-01), Dennison et al.
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6621095 (2003-09-01), Chiang et al.
patent: 6625054 (2003-09-01), Lowery et al.
patent: 6642102 (2003-11-01), Xu
patent: 6646297 (2003-11-01), Dennison
patent: 6649928 (2003-11-01), Dennison
patent: 6667900 (2003-12-01), Lowery et al.
patent: 6671710 (2003-12-01), Ovshinsky et al.
patent: 6673648 (2004-01-01), Lowery
patent: 6673700 (2004-01-01), Dennison et al.
patent: 6674115 (2004-01-01), Hudgens et al.
patent: 6687153 (2004-02-01), Lowery
patent: 6687427 (2004-02-01), Ramalingam et al.
patent: 6690026 (2004-02-01), Peterson
patent: 6696355 (2004-02-01), Dennison
patent: 6707712 (2004-03-01), Lowery
patent: 6714954 (2004-03-01), Ovshinsky et al.
patent: 2003/0048744 (2003-03-01), Ovshinsky et al.
patent: 2003/0137869 (2003-07-01), Kozicki
patent: 2003/0212724 (2003-11-01), Ovshinsky et al.
patent: 2003/0212725 (2003-11-01), Ovshinsky et al.
patent: 2004/0035401 (2004-02-01), Ramachandran et al.
patent: 2004/0042259 (2004-03-01), Campbell et al.

Affiliated with

Also associated with

Rating

Resistance variable memory elements based on polarized... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resistance variable memory elements based on polarized..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistance variable memory elements based on polarized... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3672469