Resistance variable memory elements and methods of formation

Details Resistance variable memory elements and methods of formation Resistance variable memory elements and methods of formation

2006-06-13

2006-06-13

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C365S163000

Reexamination Certificate

active

07061004

ABSTRACT:
A method and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics have at least one metal-containing layer and a silver layer disposed between glass layers. At least one of the glass layers is a chalcogenide glass, preferably having a GexSe100−xcomposition.

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