Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-09-25
2007-09-25
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C365S163000
Reexamination Certificate
active
11193425
ABSTRACT:
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide and metal layers.
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Brooks Joseph F.
Campbell Kristy A.
Daley Jon
Bernstein Allison P.
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Phung Anh
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