Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-08-30
2009-02-17
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S001000, C257S003000, C257S004000, C257S005000, C257S613000, C257S616000, C257SE45001, C257SE45002, C257SE47001, C365S148000, C365S163000
Reexamination Certificate
active
07491962
ABSTRACT:
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.
REFERENCES:
patent: 3530441 (1970-09-01), Ovshinsky
patent: 5536947 (1996-07-01), Klersy et al.
patent: 5825046 (1998-10-01), Czubatyj et al.
patent: RE37259 (2001-07-01), Ovshinsky
patent: 6325909 (2001-12-01), Li et al.
patent: 6515325 (2003-02-01), Farnworth et al.
patent: 6538367 (2003-03-01), Choi et al.
patent: 6548313 (2003-04-01), Ravi et al.
patent: 6566665 (2003-05-01), Baglin et al.
patent: 6566704 (2003-05-01), Choi et al.
patent: 6849868 (2005-02-01), Campbell
patent: 2004/0001374 (2004-01-01), Tanaka et al.
patent: 2004/0026682 (2004-02-01), Jiang
patent: 2004/0052117 (2004-03-01), Jiang
patent: 2004/0251551 (2004-12-01), Hideki
patent: 2005/0017233 (2005-01-01), Campbell
patent: 2005/0148150 (2005-07-01), Moore et al.
patent: 2005/0167689 (2005-08-01), Campbell et al.
patent: 2006/0131555 (2006-06-01), Liu et al.
Xu, J.M., Highly Ordered Carbon Nanotube Arrays and IR Detection, Infrared Physics & Technology 42 pp. 485-491, 2001.
Thurn-Albrecht, T., et al., Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates, vol. 290 Science, Dec. 15, 2000, pp. 2126-2129.
Liang, Jianyu, et al., Two-dimensional Lateral Superlattices of Nanostructures; Nonlithographic Formation by Anodic Membrane Template, vol. 91, No. 4, American Institute of Physics, 2002, pp. 2544-2546.
Campbell Kristy A.
Liu Jun
Dickstein & Shapiro LLP
Ho Hoang-Quan T
Huynh Andy
Micro)n Technology, Inc.
LandOfFree
Resistance variable memory device with nanoparticle... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resistance variable memory device with nanoparticle..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistance variable memory device with nanoparticle... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4093696