Resistance variable memory device and method of fabrication

Details Resistance variable memory device and method of fabrication Resistance variable memory device and method of fabrication

2008-03-25

2008-03-25

Pizarro, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S095000, C438S131000, C438S381000, C438S900000, C365S046000, C365S148000, C257SE31029, C257SE31030

Reexamination Certificate

active

11511312

ABSTRACT:
Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.

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