Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device
Reexamination Certificate
2011-01-11
2011-01-11
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
C257S529000, C257SE45002, C365S046000, C365S148000
Reexamination Certificate
active
07868310
ABSTRACT:
Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.
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Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Pizarro Marcos D.
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