Resistance variable memory apparatus

Details Resistance variable memory apparatus Resistance variable memory apparatus

2011-04-05

2011-04-05

Elms, Richard (Department: 4154)

Static information storage and retrieval

Read only systems

Resistive

C365S148000, C365S189160

Reexamination Certificate

active

07920402

ABSTRACT:
A resistance variable memory apparatus (100) of the present invention is a resistance variable memory apparatus (100) using a resistance variable element (22) transitioning between plural resistance states in response to electric pulses of the same polarity, in which a series resistance setting unit (10) is configured to set a resistance value of the series current path and a parallel resistance setting unit (30) is configured to set a resistance value of a parallel current path such that the resistance values become resistance values at which a node potential is not larger than a second voltage level in a state where an electric pulse application device (50) is outputting a first electric pulse after the resistance variable element (22) has switched to the high-resistance state, and the node potential is not larger than a first voltage level in the state where the electric pulse application device (50) is outputting a second electric pulse after the resistance variable element (22) has switched to the low-resistance state.

REFERENCES:
patent: 6888745 (2005-05-01), Ehiro et al.
patent: 6970385 (2005-11-01), Sakakibara
patent: 2004/0264244 (2004-12-01), Morimoto
patent: 2008/0123393 (2008-05-01), Kinoshita
patent: 2004-185756 (2004-07-01), None
patent: 2005-025914 (2005-01-01), None
patent: WO 2006/137111 (2006-12-01), None
patent: WO 2007/080840 (2007-07-01), None
Baek, I.G. et al., “Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses,” IEEE 2004.

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