Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-08-02
2011-08-02
Gebremariam, Samuel A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S379000, C257SE21662, C257SE21663, C257SE21665, C257SE21679, C257SE45002, C365S148000, C365S185080
Reexamination Certificate
active
07989790
ABSTRACT:
A memory comprises a number of word lines in a first direction, a number of bit lines in a second direction, each coupled to at least one of the word lines, and a number of memory elements, each coupled to one of the word lines and one of the bit lines. Each memory element comprises a top electrode for connecting to a corresponding word line, a bottom electrode for connecting to a corresponding bit line, a resistive layer on the bottom electrode, and at least two separate liners, each liner having resistive materials on both ends of the liner and each liner coupled between the top electrode and the resistive layer.
REFERENCES:
patent: 7161167 (2007-01-01), Johnson
patent: 2006/0226409 (2006-10-01), Burr et al.
Ho Chia-Hua
Hsieh Kuang-Yeu
Lai Erh-Kun
Gebremariam Samuel A
Jianq Chyun IP Office
Macronix International Co. Ltd.
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