Resistance memory element and method of manufacturing the same

Details Resistance memory element and method of manufacturing the same Resistance memory element and method of manufacturing the same

2011-01-11

2011-01-11

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S800000, C977S932000

Reexamination Certificate

active

07867814

ABSTRACT:
A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the insulating film. Thus, the position of the filament-shaped current path which contributes to the resistance states of the resistance memory element can be controlled by the positions and the density of the cylindrical electrodes.

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Liu, S.Q. et al.; “Electric-Pulse-induced reversible resistance change effect in magnetoresistive films”; Applied Physics Letters, vol. 76, No. 19, pp. 2749-2751, May 2000.

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