Resistance memory element and method of manufacturing the same

Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component

Reexamination Certificate

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C438S800000, C977S932000

Reexamination Certificate

active

07867814

ABSTRACT:
A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the insulating film. Thus, the position of the filament-shaped current path which contributes to the resistance states of the resistance memory element can be controlled by the positions and the density of the cylindrical electrodes.

REFERENCES:
patent: 6054226 (2000-04-01), Takeda et al.
patent: 7507674 (2009-03-01), Park et al.
patent: 2004/0201378 (2004-10-01), Sugano
patent: 2004/0219773 (2004-11-01), Choi et al.
patent: 2004/0264064 (2004-12-01), Sakakima
patent: 2005/0215049 (2005-09-01), Horibe et al.
patent: 1533846 (2003-05-01), None
patent: 10-190092 (1998-07-01), None
patent: 2003-008105 (2003-01-01), None
patent: 2003-347515 (2003-12-01), None
patent: 2004-301548 (2004-10-01), None
patent: 2005-039228 (2005-02-01), None
patent: 2005-123298 (2005-05-01), None
patent: 2005-244145 (2005-09-01), None
International Search Report of PCT/JP2006/300588; date of mailing Mar. 7, 2006.
Liu, S.Q. et al.; “Electric-Pulse-induced reversible resistance change effect in magnetoresistive films”; Applied Physics Letters, vol. 76, No. 19, pp. 2749-2751, May 2000.

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