Patent
1975-01-13
1976-11-02
Heyman, John S.
357 86, H01L 2704
Patent
active
039900924
ABSTRACT:
A semiconductor integrated circuit contains a resistance element, wherein a low resistance region of a first conductivity type, employed for a circuit resistance, is formed within a high resistance region of a second conductivity type, opposite to the first conductivity type. The low resistance region and the high resistance region are connected in parallel, so as to prevent the formation of a parasitic transistor and a parasitic thyristor.
REFERENCES:
patent: 3649883 (1972-03-01), Augustine
patent: 3693054 (1972-09-01), Anderson
patent: 3795828 (1974-03-01), Cavaliere et al.
Heyman John S.
Hitachi , Ltd.
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