Resistance-changing function body, memory element,...

Details Resistance-changing function body, memory element,... Resistance-changing function body, memory element,...

2006-04-18

2006-04-18

Graybill, David E. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S529000, C257S537000

Reexamination Certificate

active

07030456

ABSTRACT:
A memory function body113, which includes a plurality of silver particles103covered with silver oxide104, is interposed between a first electrode300and a second electrode411. A magnitude of a current through the memory function body113changes on applying a prescribed voltage between the first electrode300and the second electrode411, and a storage state is discriminated according to the magnitude of the current. The silver particles103, which capture electric charges, are covered with the silver oxide104that serves as a barrier against the passage of electric charges, and therefore, the memory function body113can stably retain electric charges at the normal temperature.

REFERENCES:
patent: 4386021 (1983-05-01), Kazuo et al.
patent: 4551268 (1985-11-01), Eda et al.
patent: 2000-220055 (2000-01-01), None

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