Resistance change memory having organic semiconductor layer

Details Resistance change memory having organic semiconductor layer Resistance change memory having organic semiconductor layer

2007-04-17

2007-04-17

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C365S158000

Reexamination Certificate

active

10979327

ABSTRACT:
A resistance change memory includes a memory element, and a first organic semiconductor layer in contact with the memory element.

REFERENCES:
patent: 6269018 (2001-07-01), Monsma et al.
patent: 7002197 (2006-02-01), Perner et al.

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