Resistance change memory device

Details Resistance change memory device Resistance change memory device

2007-06-11

2008-12-02

Purvis, Sue A. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257S246000, C257S248000, C257SE45002, C365S148000, C439S936000

Reexamination Certificate

active

07459715

ABSTRACT:
A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, bit lines and word lines; a read/write circuit formed on the semiconductor substrate; first and second vertical wirings connecting bit lines to the read/write circuit; and third vertical wirings connecting word lines to the read/write circuit, wherein the memory cell includes a variable resistance element. The variable resistance element has: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of the electrodes serving as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site therein.

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