Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Reexamination Certificate
2000-11-21
2003-01-21
Kopec, Mark (Department: 1751)
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
C134S001300, C134S038000, C134S039000, C134S040000, C510S175000, C510S176000, C510S386000, C510S488000, C510S493000, C510S501000, C510S502000
Reexamination Certificate
active
06508887
ABSTRACT:
CROSS-REFERENCES TO RELATED APPLICATIONS
The present application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 99-52995 filed on Nov. 26, 1999, the entire contents of which are hereby incorporated by reference for all purposes.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a resist removing composition and a resist removing method using the same.
2. Description of the Related Art
In order to complete an integrated circuit, it is necessary to form various interconnection patterns, e.g., tungsten, aluminum, copper or titanum, titanum nitride interconnection patterns, and contact holes or via holes for exposing these interconnection patterns. A process for forming the interconnection patterns and contact holes or via holes includes a photolithographic process, an etching process, a resist removing process, a rinsing process and a drying process.
In particular, an important issue in the resist removing process is to completely remove resist and etching residues from the surface of a substrate as fast as possible while not attacking underlying layers. In general, the resist removing process is carried out by a combination of dry stripping, e.g., ashing, and wet stripping using an organic stripper. The wet stripping is for removing impurities such as remaining resist which is not completely removed during the ashing and/or residues generated during etching and ashing for forming interconnection patterns or contact (via) holes from the surface of an integrated circuit substrate. The residues to be removed include organic polymer produced by reaction of plasma and components constituting the resist pattern, such as carbon (C), hydrogen (H), or oxygen (O), organometallic polymer produced when interconnection materials are back-sputtered to side walls of the resist pattern and a contact or via hole during an etching or ashing step, insulating materials or metal oxide formed when an insulation layer under the interconnection pattern is over-etched and then back-sputtered.
An organic stripper currently in wide use includes basic amine reducing agent such as hydroxyamine, diglycolamine, monoethanolamine or methylethanolamine, a polar solvent such as alcohol and an organic acid such as catechol, as its essential components.
Since the basic amine of the organic stripper has a relatively weak reducing power, it cannot completely remove etching residues, e.g., a metal oxide, such as tungsten oxide or copper oxide, or organometallic polymer, produced when a new interconnection, e.g., a tungsten interconnection or a copper interconnection, is etched. Thus, before the ashing, a nitric acid treatment is necessary as a pre-ashing.
Since the conventional organic stripper is mainly composed of organic components, this stripper is not completely removed when rinses with only deionized water. Instead, this stripper remains on the substrate, thereby easily corroding the interconnection layer, and thus deforming the profile of the interconnection layer pattern. Thus, an alcohol-based rinsing agent such as isopropyl alcohol (IPA) must be used to rinse the stripper before executing a post-removal rinse. Therefore, the manufacturing process becomes more complicated and processing time is prolonged, thereby lowering productivity. Also, since nitric acid and IPA are further required in addition to the organic stripper, the manufacturing cost increases. In addition, since independent baths for the various steps are required, a resist removing facility becomes unnecessarily bulky.
SUMMARY OF THE INVENTION
The present invention is therefore directed to a resist removing composition and method which substantially overcomes one or more of the problems due to the limitations and disadvantages of the related art.
A first object of the present invention is directed to providing a resist removing composition having excellent removal qualities for resist, polymer, organometallic polymer and metal oxide, and which does not attack underlying layers exposed to the resist removing composition.
A second object of the present invention is to provide a method for removing a resist using the resist removing composition.
Accordingly, to achieve the above objects and advantages, the present invention is directed to providing a resist removing composition including alkoxy N-hydroxyalkyl alkanamide, at least one selected from the group consisting of alkanolamine, a polar material having a dipole moment of 3 or greater and an attack inhibitor, and at least one of a fluoride-based reducing agent and a hydroxide-based reducing agent.
In another aspect of the present invention, the resist removing composition includes alkoxy N-hydroxyalkyl alkanamide, at least one selected from the group consisting of alkanolamine, a polar material having a dipole moment of 3 or greater and an attack inhibitor, and hydrogen peroxide.
According to another aspect of the present invention, there is provided a resist removing method including the steps of providing a substrate, forming a resist layer on the substrate, and contacting the substrate with a resist removing composition and removing the resist layer, the resist removing composition comprising alkoxy N-hydroxyalkyl alkanamide, at least one selected from the group consisting of alkanolamine, a polar material having a dipole moment of 3 or greater and an attack inhibitor, and at least one of a fluoride-based reducing agent and a hydroxide-based reducing agent, or the resist removing composition comprising alkoxy N-hydroxyalkyl alkanamide, at least one selected from the group consisting of alkanolamine, a polar material having a dipole moment of 3 or greater and an attack inhibitor, and hydrogen peroxide.
The resist removing agent or resist removing composition according to the present invention has an excellent capability for removing the resist, is capable of effectively removing polymer, organometallic polymer and metal oxide, and does not attack the underlying layers exposed to the resist removing composition.
These and other objects of the present invention will become more readily apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating the preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this detailed description.
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Darbinyan et al, Synthesis of azole derivatives and polymers based on them, Inst. Org. Khi., Erevan, USSR, abstract only.
Chon Sang-mun
Gil June-ing
Park Dong-jin
Park Je-eung
Kopec Mark
Mruk Brian P.
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