Organic compounds -- part of the class 532-570 series – Organic compounds – Sulfur containing
Reexamination Certificate
2009-03-26
2011-11-01
Lee, Sin J. (Department: 1722)
Organic compounds -- part of the class 532-570 series
Organic compounds
Sulfur containing
C568S061000, C568S062000, C568S063000, C568S064000, C568S067000, C568S069000, C568S700000, C568S715000, C568S807000, C568S808000, C568S811000, C568S817000, C568S818000, C568S822000, C568S838000, C568S840000, C568S852000, C546S184000, C546S186000, C546S189000, C546S190000, C570S101000, C570S181000, C570S186000, C430S270100
Reexamination Certificate
active
08049042
ABSTRACT:
To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like.In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1and K2each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1and L2each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2and M3each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1and Y2each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1represents H or a methyl group.
REFERENCES:
patent: 6630282 (2003-10-01), Oomori et al.
patent: 2002/0034704 (2002-03-01), Oomori et al.
patent: 2004/0063030 (2004-04-01), Barr et al.
patent: 2004/0242798 (2004-12-01), Sounik et al.
patent: 2004/0248039 (2004-12-01), Sounik et al.
patent: 1514302 (2004-07-01), None
patent: 1 403 708 (2004-03-01), None
patent: 1 479 700 (2004-11-01), None
patent: 3-134669 (1991-06-01), None
patent: 2000-214587 (2000-08-01), None
patent: 2002-62656 (2002-02-01), None
patent: 2002-72481 (2002-03-01), None
patent: 2002-303984 (2002-10-01), None
patent: 2003-122007 (2003-04-01), None
patent: 2003-280200 (2003-10-01), None
patent: 2003-342306 (2003-12-01), None
patent: 2003-344994 (2003-12-01), None
patent: 2004-151691 (2004-05-01), None
patent: 2004-352989 (2004-12-01), None
patent: 2004030341 (2004-04-01), None
Rothstein (Chemical Abstract No. 1925:10431, an English abstract for “Trimethylenebisthioglycolic acid”, Berichte der Deutschen Chemischen Gesellschaft [Abteilung] B: Abhandlungen (1925), 58B, p. 53-56).
JPO English abstract for JP2000-214587.
Nedolya, et al., Zhurnal Organicheskoi Khimii, vol. 23, No. 6, 1987, 2 cover pages and pp. 1180-1185.
U.S. Appl. No. 13/032,299, filed Feb. 22, 2011, Momose, et al.
Momose Hikaru
Nakamura Tadashi
Ootake Atsushi
Ueda Akifumi
Lee Sin J.
Mitsubishi Rayon Co. Ltd.
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Resist polymer, resist composition, process for pattern... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resist polymer, resist composition, process for pattern..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resist polymer, resist composition, process for pattern... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4270201