Resist pattern forming method, semiconductor apparatus using...

Photocopying – Projection printing and copying cameras – With temperature or foreign particle control

Reexamination Certificate

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C355S027000, C396S611000

Reexamination Certificate

active

07821616

ABSTRACT:
In immersion exposure, a resist pattern forming method suppressing resist pattern defects comprises mounting a substrate formed a resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus, supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the solution, the first liquid film having a flow and being formed between the resist film and a projection optical system, transferring the pattern of the reticle to the resist film through the first liquid film to form a latent image, supplying a second chemical solution onto the resist film to clean the resist film, heating the resist film, and developing the resist film to form a resist pattern from the resist film.

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