Resist material comprising polymer of allylsilyl compound and pa

Details Resist material comprising polymer of allylsilyl compound and pa Resist material comprising polymer of allylsilyl compound and pa

1984-05-22

1986-01-14

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

430288, 430296, 430270, 522 64, 526279, G03C 168, G03C 170, G03C 516, C08F 3008

Patent

active

045645760

ABSTRACT:
A polymer having allyl groups each attached to a silicon atom serves as a resist material which is highly resistive to dry etching such as reactive sputter etching with oxygen and sensitive to electron beams, X-rays and deep UV rays. By the addition of a bis-azide compound known as a photosensitive cross-linking agent the resist material becomes sensitive also to UV and near UV rays. A very suitable polymer is obtained by polymerizing either a triallylsilane or an allylsilylstyrene or by copolymerizing an allylsilylstyrene with another ethylenic compound copolymerizable with styrene. This resist material is used in a pattern forming method of the two-layer type, in which a fine pattern is generated in a thin film of the resist material by lithography and then transferred into an underlying thick organic layer by dry etching of the thick organic layer with the resist pattern as a mask.

REFERENCES:
patent: 2538657 (1951-01-01), Rochow
patent: 3945830 (1976-03-01), Yazawa et al.
patent: 4301231 (1981-11-01), Atarashi et al.

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