Resist mask formation process

Details Resist mask formation process Resist mask formation process

1974-04-22

1976-10-19

Smith, Ronald H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427273, 96 351, 96 362, 96 48R, 96115R, 20415914, B05D 306

Patent

active

039872157

ABSTRACT:
A resist mask is formed by coating on a substrate a layer of a polymer, such as polymethyl methacrylate, which is degradable by high energy radiation, such as a scanning electron beam. The layer is exposed to high energy radiation in a patternwise manner so as to lower the molecular weight of the polymer in the exposed portions. The layer is developed to remove the exposed portions by immersing the layer in a developer which consists of alkyl acetates and ketones having between 7 and 9 carbon atoms and mixtures thereof at a temperature of at least about 40.degree. C.

REFERENCES:
patent: 2670286 (1954-02-01), Minsk et al.
patent: 2670287 (1954-02-01), Minsk et al.
patent: 2892712 (1959-06-01), Plambeck, Jr.
patent: 3535137 (1970-10-01), Haller et al.
patent: 3679497 (1972-07-01), Handy et al.
patent: 3779806 (1973-12-01), Gipstein et al.
Haller et al., "High-Resolution Positive Resists for Electron-Beam Exposure," IBM Journal, May 1968, pp. 251-252.

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