Resist exposure system and method of forming a pattern on a...

Details Resist exposure system and method of forming a pattern on a... Resist exposure system and method of forming a pattern on a...

2007-01-30

2007-01-30

Walke, Amanda (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Effecting frontal radiation modification during exposure,...

C430S270100, C430S905000, C430S907000, C430S910000, C430S945000

Reexamination Certificate

active

10921709

ABSTRACT:
A resist exposure system and a method of forming a pattern on a resist are provided and include an exposure source, a photoresist composition, and a mask positioned therebetween. The resist composition comprises a first photoresist X and a second photoresist Y. The first photoresist X absorbs at a higher wavelength than the second photoresist Y. The second photoresist Y has a lower glass transitional temperature than the first photoresist X.

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Metrology Supporting Deep Ultraviolet Lithography, http://www.eeel.nist.gov/810.01/lithography—deep.html.

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