Resin sealed semiconductor device for use in testing and evaluat

Details Resin sealed semiconductor device for use in testing and evaluat Resin sealed semiconductor device for use in testing and evaluat

1991-03-21

1993-04-20

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In voltage variable capacitance diode

257415, 257417, 257787, 324158R, H01L 2348

Patent

active

052045404

ABSTRACT:
A resin sealed semiconductor device for use in testing is disclosed, in which a first MOS field effect transistor is formed in a region within 100 .mu.m from an outer perimeter of a main surface of a silicon substrate, and a second MOS field effect transistor is formed in a region 100 .mu.m or more distant from an outer perimeter of the main surface, and the first and second MOS field effect transistors are encapsulated with resin. Dimensions and materials of the first MOS field effect transistor and the second MOS field effect transistor are identical. By comparing the electric characteristics of the first MOS field effect transistor and the electric characteristics of the second MOS field effect transistor, the effect produced on the MOS field effect transistors by the mechanical stresses due to the resin seal applied from a side direction of silicon substrate can be evaluated.

REFERENCES:
patent: 5045918 (1991-09-01), Cagan et al.
Solid-State electronics by Korsh et al "Conduction Properties of Lightly Doped, Polycrystalline Silicon", vol. 21, pp. 1045-1051. Mar. 21, 1991.

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