Resin-molded semiconductor device using polymide and nitride fil

Details Resin-molded semiconductor device using polymide and nitride fil Resin-molded semiconductor device using polymide and nitride fil

1989-06-26

1991-02-05

Carroll, J.

357 65, 357 71, 357 72, 357 73, H01L 2934, H01L 2348, H01L 2329

Patent

active

049909932

ABSTRACT:
Herein disclosed is a semiconductor device having a semiconductor element, which is constructed to include a bonding pad for the semiconductor element formed selectively on one main side of a semiconductor layer, with a nitride film so formed on the main side of said semiconductor layer as to expose the surface of said bonding pad to the outside, and with a polyimide resin film formed on both said bonding pad and said nitride film. A sealing resin is formed to cover the surface portion of the bonding pad and the nitride film. This construction seals the semiconductor element from moisture, and prevents corrosion of the bonding pad due to said moisture.

REFERENCES:
patent: 4001870 (1977-01-01), Saiki et al.
patent: 4060828 (1977-11-01), Satonaka
patent: 4365264 (1982-12-01), Mukai et al.
patent: 4733289 (1988-03-01), Tsurumaru

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