Resin mold field effect semiconductor device

Details Resin mold field effect semiconductor device Resin mold field effect semiconductor device

1991-12-30

1993-12-14

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

257789, H01L 2328, H01L 2306

Patent

active

052705730

ABSTRACT:
A semiconductor element includes a vertical power MOSFET whose base material is silicon crystal having (100) plane as a major face. The semiconductor element is brazed to the surface of a metal plate with a brazing filler metal. By means of a transfer molding technology, the semiconductor element, the metal plate, inner lead wires and parts of external terminals are sealed in a resin having a linear expansion coefficient 1.2 times larger than that of the metal plate.
The ON resistance of the field effect transistor can be decreased by 10% or more, and the exothermic reaction of a semiconductor device itself is restrained.

REFERENCES:
patent: 4744637 (1988-05-01), Sekimura et al.
patent: 5070041 (1991-12-01), Katayama et al.

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