Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-10-28
2010-11-09
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S642000, C257S643000, C257SE51027
Reexamination Certificate
active
07829967
ABSTRACT:
The present invention relates to a resin for optical-semiconductor-element encapsulation containing a polyimide which is produced by imidizing a polyimide precursor obtained by subjecting 5-norbornene-2,3-dicarboxylic anhydride or maleic anhydride, an aliphatic tetracarboxylic dianhydride, and an aliphatic diamine compound to a condensation polymerization reaction. The resin of the invention has excellent heat resistance and excellent light-transmitting properties. In addition, the present invention also relates to an optical semiconductor device containing an optical semiconductor element encapsulated with the resin.
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Qinghua Li et al., “Absorption, Fluorescence, and Thermal Properties of Transparent Polyimides Based on Cyclobutanetetracarboxylic Dianhydride”, Polymer Journal, 1998, pp. 805-812, vol. 30, No. 10, Society of Polymer Science, Tokyo, Japan, XP002927597.
European Search Report dated Aug. 28, 2009.
Ngo Ngan
Nitto Denko Corporation
Sughrue & Mion, PLLC
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