Resin encapsulation type semiconductor device

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428414, 428417, 428325, 428451, 426460, 426524, 174110SR, 174 52PE, 357 72, 357 40, B32B 2738, H01B 708

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045728534

ABSTRACT:
There is presented a highly reliable resin encapsulation type semiconductor device excellent in humidity resistance as well as high temperature electrical characteristics. The specific feature consists in the epoxy resin composition employed for encapsulation. This composition comprises an epoxy resin, a novolac resin as curing agent and an organic tertiary phosphine compound as curing accelerator. The resin encapsulation type semiconductor device is markedly small in leak current under hot and humid conditions and has a prolonged life due to difficult deterioration through corrosion of electrodes and aluminum wiring, as compared with those of prior art.

REFERENCES:
patent: 2768153 (1956-10-01), Shokal
patent: 3749601 (1973-07-01), Tittle
patent: 4075420 (1978-02-01), Walton
patent: 4370465 (1983-01-01), Whiteside, Jr. et al.
Lee et al., "Reaction of Epoxides," Handbook of Epoxy Resins, Appendix 5-1, 1967.
Kitamura et al., "Resin Composition for Semi-Conductor Shielding," Chemical Abstracts, vol. 83, p. 66, col. 1, abstract No. 11754p, 1975.
Kitamura et al., "Moisture-Resistant Epoxy Resin Compositions for Resin-Molded Semiconductor Devices," Chemical Abstracts, vol. 84, p. 460, cols. 1 and 2, abstract No. 11505d, 1976.
Certified copy of U.S. patent application Ser. No. 700,726 (corresponding to Japanese patent publication No. 4714148) (1972).

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