Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With structure for mounting semiconductor chip to lead frame
Reexamination Certificate
2005-02-23
2008-05-13
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
With structure for mounting semiconductor chip to lead frame
C257S712000
Reexamination Certificate
active
07372132
ABSTRACT:
A semiconductor device having both high strength and high thermal radiation that is capable of being applied to mounting on automobiles experiencing many thermal cycles, and a manufacturing method thereof are provided. A circuit board1afor a resin encapsulated semiconductor module device has a configuration where a silicon nitride plate2with a thickness of 0.635 mm has copper plates of 1.0 mm and 0.8 mm bonded to both sides thereof via active metal. A copper plate3ais bonded to the surface side of the silicon nitride plate2,and a prescribed circuit pattern is formed on the copper plate3a.Tin-silver-copper cream solder layers4aand4bwith a thickness of 200 μm are formed at a prescribed location on the circuit pattern3aon which a semiconductor element6is mounted and at a prescribed location of a base plate1on which the circuit board1ais disposed. Nickel particles5having a maximum particle size of 100 μm and an average particle size of 70 μm are dispersed in the solder4aon the base plate1of good thermal conductivity. A semiconductor element (chip)6,the circuit board1a,and the base plate1are disposed on predetermined locations. Thereafter, they are set in a reflow oven (not shown in the drawings) for reflow soldering. After the inside of the reflow oven is replaced by a nitrogen atmosphere, the reflow oven is heated to 280° C. At the time when solder is melted, the inside of the oven is decompressed to 1 Pa, nitrogen is introduced, and the reflow oven is cooled to about room temperature, thereby completing the solder bonding step. After flux is washed, an outer case7with an insert-molded outlet terminal8is adhered to the base plate1and a predetermined connection is conducted via an aluminum bonding wire9.Then, silicone gel10is injected into a package delimited via the base plate1and the outer case7,and the silicone gel10is heat-hardened, thereby completing a resin encapsulated semiconductor device A.
REFERENCES:
patent: 5391604 (1995-02-01), Dietz et al.
patent: 5446318 (1995-08-01), Koike et al.
patent: 5917245 (1999-06-01), Tomizawa
patent: 6232657 (2001-05-01), Komorita et al.
patent: 6690087 (2004-02-01), Kobayashi et al.
patent: 2001/0050422 (2001-12-01), Kishimoto et al.
patent: 2006/0103005 (2006-05-01), Schulz-Harder et al.
patent: 197 24 909 (1998-12-01), None
patent: 102 27 658 (2004-01-01), None
patent: 5-93038 (1993-12-01), None
patent: 9-162325 (1997-06-01), None
patent: 10-190176 (1998-07-01), None
patent: 11-40716 (1999-02-01), None
patent: 2002-84046 (2002-03-01), None
patent: 2003-243610 (2003-08-01), None
Chiba Mitsuaki
Imamura Hisayuki
Morita Toshiaki
Suzuki Kazuhiro
Watanabe Jun-ichi
Dickstein & Shapiro LLP
Hitachi , Ltd.
Hitachi Metals Ltd.
Potter Roy
LandOfFree
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