Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-06-05
2007-06-05
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S530000, C257S289000, C257S347000, C257S353000, C257S356000, C257S300000
Reexamination Certificate
active
10948773
ABSTRACT:
A resettable fuse device is fabricated on one surface of a semiconductor substrate (10) and includes: a gate region (20) having first and second ends; a source node (81) formed in proximity to the first end of the gate region; an extension region (52) formed to connect the source node to the first end of the gate region; and a drain node (80) formed in proximity to the second end of the gate region and separated from the gate region by a distance (D) such that upon application of a predetermined bias voltage to the drain node a connection between the drain node and the second end of the gate region is completed by junction depletion. A gate dielectric (30) and a gate electrode (40) are formed over the gate region. Current flows between the source node and the drain node when the predetermined bias is applied to both the drain node and the gate electrode.
REFERENCES:
patent: 3646527 (1972-02-01), Wada et al.
patent: 2003/0122200 (2003-07-01), Kamiya et al.
Abadeer Wagdi William
Fifield John Atkinson
Gauthier Jr. Robert J.
Tonti William Robert
Erdem Fazli
Pert Evan
Rabin & Berdo PC
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