Reprogrammable read only memory

Static information storage and retrieval – Read only systems

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365100, 365 96, G11C 1700

Patent

active

044411677

ABSTRACT:
A memory is provided having a plurality of addressable memory elements, each one thereof having a first programmable device electrically coupled to a second programmable device, the first programmable device having a normally low resistance characteristic which, when programmed, is changed to a relatively high resistance characteristic, and the second programmable device having a normally high resistance characteristic which, when programmed, is changed to a relatively low resistance characteristic. The first programmable device and second programmable device are serially connected to provide an array of memory elements having a relatively high resistance characteristic in an initial, unprogrammed condition. The memory is first programmed by changing the resistance characteristic of selected ones of the second programmable elements. If it is desired to reprogram the memory, the resistance characteristic of selected ones of the first programmable elements are changed.

REFERENCES:
patent: 3717852 (1973-02-01), Abbas et al.
patent: 3764825 (1973-10-01), Stewart
patent: 4382289 (1983-05-01), Saitoh
patent: 4384345 (1983-05-01), Mikome
Simon, "Writable Read-Only Memory Utilizing Electrophoresis", IBM Tech. Disc. Bul., vol. 14, No. 7, 12/71, p. 2084.

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