Reproducible resistance variable insulating memory devices...

Details Reproducible resistance variable insulating memory devices... Reproducible resistance variable insulating memory devices...

2010-11-24

2011-10-18

Valentine, Jami M (Department: 2894)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S103000, C257S002000, C257S003000, C257S004000, C257S005000, C257SE29002, C365S163000

Reexamination Certificate

active

08039300

ABSTRACT:
The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device. The shaped bottom electrode ensures that the thickness of the insulating material at the tip of the bottom electrode is thinnest, creating the largest electric field at the tip of the bottom electrode. The arrangement of electrodes and the structure of the memory element makes it possible to create conduction paths with stable, consistent and reproducible switching and memory properties in the memory device.

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