Replaceable image sensor array

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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357 24, 357 55, 357 60, 250578, H01L 2714, H01L 3100, H01L 2904, H01L 2906

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active

048600750

ABSTRACT:
An image sensor array and method of fabrication which facilitates replacement of a defective one in a series of arrays butted together to form a longer scanning array in which a (110) silicon wafer having a row of photosites has separation lines etched thereon by orientation dependent etching along the (111) planes, with the separation lines for the opposite ends of the array each consisting of first and second partial boundary lines longitudinally offset from one another connected by a third boundary line so that the ends of the array have a has a generally L-shaped offset permitting bi-directional separating and aligned inserting movement when replacing a defective array.
In a second embodiment, the arrays are formed on (100) silicon with alternating `nail` head and `mesa` head shapes to facilitate removal and replacement of a defective array.

REFERENCES:
patent: 4663656 (1987-05-01), Elabo et al.
Ibrahim et al., "A High Resolution Buttable Time Delay and Integrate Imaging CCD", 1978 Int. Conf. Application of Charge Coupled Devices, San Diego, Oct. 1978, Proc. pp. 1-25, 1-40.

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