Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-03-22
2005-03-22
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S414000, C257S431000, C977S726000
Reexamination Certificate
active
06870237
ABSTRACT:
A symmetric or asymmetric multilayer structure based on the technique of surface plasmon resonance (SPR) has been applied for modulation of resonant angle and wavelength. The fabrication of this invention can have nanoscale thin film layers up to several hundreds, while each layer has its own material of a high or low refractive index value, and the total layers in a thickness of tens to hundreds nanometers are grown in this single structure. This invention is intended for optimizing the scanning of mechanism by modulating SPR resonant angle and wavelength, and for developing the prospect of portable instruments.
Chang Peizen
Huang Chen Kung
Lee Chih Kung
Lee Shu Sheng
Lin Chii-Wann
National Taiwan University
Pham Long
Rabin & Berdo P.C.
LandOfFree
Repeated structure of nanometer thin films with symmetric or... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Repeated structure of nanometer thin films with symmetric or..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Repeated structure of nanometer thin films with symmetric or... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3416617