Repeatable method for sloping walls of thin film material

Details Repeatable method for sloping walls of thin film material Repeatable method for sloping walls of thin film material

1980-10-14

1982-04-27

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, C23C 1500

Patent

active

043269362

ABSTRACT:
The invention is a method of sloping thin film materials so that smooth, continuous films may be deposited thereon. By controlling the thickness of resist mask over the materials (as for patterning) relative to ion milling or sputter etching parameters, repeatable slopes and linewidths may be achieved. For use in bubble memory fabrication, the sloping of conductor walls enables propagation bars to be laid down in crossing over relation thereto while enhancing yield.

REFERENCES:
patent: 4092210 (1978-05-01), Hoepfner
patent: 4119881 (1978-10-01), Calderon
M. Cantagrei, "Comparison of the Properties of Different Materials Used as Masks for Ion-Beam Etching", J. Vac. Sci. Technol., vol. 12, pp. 1340-1343 (1975).
L. Mader et al., "Ion Beam Etching of Silicon Dioxide on Silicon," J. Electrochem. Soc., vol. 123, pp. 1893-1898 (1976).
J. E. Hitchner et al. "Polyimide Layers Having Tapered via Holes", IBM Tech. Disc. Bull., vol. 20, p. 1384 (1977).
J. A. Bondur et al., "Step Coverage Process with Projection Printing & Reactive Ion Etching," IBM Tech. Disc. Bull., vol. 19, pp. 3415-3416 (1977).
P. G. Gloersen, "Ion-Beam Etching", J. Vac. Sci. Technol., vol. 12, pp. 28-35 (1975).

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