Repair of reflective photomask used in semiconductor process

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430324, G03F 900

Patent

active

057801878

ABSTRACT:
A reflective photomask is fabricated enabling photolithographic processes at wavelengths as low as 100 nm, with preferred embodiments enabling processes at wavelengths of 150-200 nm. Reflective photomask defects of the type where material is missing are repaired by locally depositing material over the defective area. The deposit area is then trimmed, if needed, to remove excess material. The deposited material has substantially the same reflectivity and phase as the adjacent mask area. Chemical-mechanical polishing (CMP) or another planarizing process is used to smooth the defect area with the deposited material. The planarizing process prevents height differentials or border variations on the mask surface between the region where the material is deposited and the surrounding regions.

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patent: 5429896 (1995-07-01), Hasegawa et al.
patent: 5455131 (1995-10-01), Kang et al.

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