Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1998-03-31
2000-07-04
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
134 12, 134 13, H01L 2100, B08B 300, B08B 304, C23F 100
Patent
active
060838485
ABSTRACT:
A method for removing solder from the leads of ICs including immersing the IC in an acid solution. The acid solution dissolves the excess solder on the IC leads. The acid solution is preferably a hydrogen chloride solution containing about 38% hydrogen chloride and 62% water. The acid solution, however, can contain up to 50% hydrogen chloride. After the IC is immersed for a period of time, preferably ten minutes, it is removed from the acid solution and rinsed with water. The IC is rinsed so as to remove any remaining acid solution residue. Rinsing for 5 minutes or more typically ensures removing all of the acid solution. The IC is then inspected to determine whether substantially all of the excess solder is removed from the IC leads. If excess solder still remains on the IC leads, the IC is reintroduced into the solder removing process including immersing the IC in the acid solution, rinsing the IC with water, and inspecting the IC. The process is repeated until substantially all, if not all, of the excess solder is removed.
REFERENCES:
patent: 4014715 (1977-03-01), Preston
patent: 4773940 (1988-09-01), Layher
patent: 5499668 (1996-03-01), Katayama et al.
Hidy Jay
Sugasawara Emery
Weaver Kevin
LSI Logic Corporation
Umez-Eronini Lynette T.
Utech Benjamin L.
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