Etching a substrate: processes – Forming or treating optical article
Reexamination Certificate
2011-04-05
2011-04-05
Consilvio, Mark (Department: 2872)
Etching a substrate: processes
Forming or treating optical article
C359S360000, C359S582000, C359S584000
Reexamination Certificate
active
07919004
ABSTRACT:
A method for removing at least one reflective layer (4a,4b) from an optical element (1) for EUV lithography, wherein the optical element (1) has a substrate (2) and an interlayer (6) between the substrate (2) and the at least one reflective layer (4a,4b). The method includes etching away the at least one reflective layer (4a,4b) as far as the interlayer (6) with an etching gas (7), wherein the material of the interlayer (6) does not react with the etching gas (7), and wherein, after the etching away, the interlayer (6) has a surface roughness of less than 0.5 nm rms, preferably of less than 0.2 nm rms, and more preferably of less than 0.1 nm rms. Also, an optical element (1) for reflecting radiation in the EUV wavelength range includes a substrate (2), at least one reflective layer (4a,4b), and an interlayer (6) arranged between the substrate (2) and the at least one reflective layer (4a,4b). The interlayer (6) is composed at least partly of a material which does not react with a halogen or a halogen compound as etching gas (7) and which is selected, in particular, from one or more of the following: alkali metal halides, alkaline earth metal halides and aluminum oxide (Al2O3). The interlayer (6) has a surface roughness of less than 0.5 nm rms, preferably of less than 0.2 nm rms, and more preferably of less than 0.1 nm rms.
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Andiel Ulrich
Bork Olaf
Weiser Martin
Carl Zeiss SMT GmbH
Consilvio Mark
Sughrue & Mion, PLLC
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