Removing interhalogen compounds from semiconductor manufacturing

Details Removing interhalogen compounds from semiconductor manufacturing Removing interhalogen compounds from semiconductor manufacturing

1995-02-21

1996-08-20

Straub, Gary P.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

134 2211, 134 2212, 437250, C30B 2500, B08B 903, H01L 2100

Patent

active

055468900

ABSTRACT:
Inert gas is introduced in and then discharged from the inside of a pneumatic device such as a chamber, a pipe or the like which is used for producing semiconductor devices and through which interhalogen compound gas passes. Then, gas having humidity exceeding 1% is introduced into the chamber or the like. Before the gas having humidity exceeding 1% is introduced into the chamber or the like, the interhalogen compound gas in the chamber or the like is lowered in concentration to such an extent that the inner wall of the chamber or the like is not corroded. Thereafter, when the gas having humidity exceeding 1% is introduced, the interhalogen compound (for example, ClF.sub.3 gas) is decomposed into a substance such as HF or the like of which toxicity is low and of which adsorptivity to the inner wall of the chamber or the like is also low. Thereafter, the inside of the chamber or the like is opened to atmosphere. Thus, when the method above-mentioned is used for opening, to atmosphere, the inside of a pneumatic device which is used for producing semiconductor devices and in which etching, CVD, cleaning or the like is executed using interhalogen compound gas, this prevents not only the inner wall of the pneumatic device from being corroded, but also the human body from being adversely affected.

REFERENCES:
patent: 4369031 (1983-01-01), Goldman et al.
patent: 4464222 (1984-08-01), Gutsche
patent: 5089441 (1992-02-01), Moslehi
patent: 5212118 (1993-05-01), Saxena
patent: 5348587 (1994-09-01), Eichman et al.

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