Removing damage caused by plasma etching and high energy implant

Details Removing damage caused by plasma etching and high energy implant Removing damage caused by plasma etching and high energy implant

1994-11-25

1996-08-06

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437937, 437939, H01L 21266

Patent

active

055433367

ABSTRACT:
A chamber 103 for introducing hydrogen without causing serious damage to a semiconductor wafer and a chamber 104 for eliminating the hydrogen introduced into the semiconductor wafer at relatively low temperature are installed at the succeeding stage of a plasma etching unit for effectively correcting the damage caused by plasma etching and ion implantation to a semiconductor substrate or an ion implanting unit. In order to introduce hydrogen into the semiconductor wafer without serious damage, a mixture of hydrocarbon gas and oxygen gas for accelerating the decomposition of the hydrocarbon gas is used for forming hydrogen radicals in a plasma and the hydrogen radicals are supplied to the semiconductor wafer at room temperature by a downstream system. The semiconductor wafer is heat-treated in an atmosphere of a vacuum or inactive gas in a temperature region of 200.degree.-500.degree. C. to eliminate the hydrogen introduced into the semiconductor wafer.

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