Removing agent composition and removing/cleaning method...

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

Reexamination Certificate

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Details

C134S001300

Reexamination Certificate

active

08063007

ABSTRACT:
The present invention relates to a removal cleaning method for a semiconductor substrate or a semiconductor device with metal wirings by using a remover composition, wherein the remover composition contains a dissolution agent having an alumina dissolution amount as measured according to the standard test (A-1) of 10 ppm or more, and an inhibitor having an aluminum etching amount as measured according to the standard test (B-1) of 7 nm or less, and the remover composition substantially does not contain a fluorine-containing compound; a method of producing a semiconductor substrate or a semiconductor device, including the step involving the removal cleaning method; and a remover composition containing a specified acid, and a specified inorganic acid salt and/or organic acid salt. The removal cleaning method and the remover composition of the present invention can be suitably used for producing even higher-speed, even more highly integrated and high quality electronic parts such as LCDs, memories and CPUs, particularly for cleaning a semiconductor substrate or a semiconductor device in which a wiring material containing aluminum and/or titanium is used.

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English Language Abstract of JP 2002-162755 A (Jun. 7, 2002).
English Language Abstract of JP 2004-94203 A (Mar. 25, 2004).
English Language Abstract of JP 2004-133384 A (Apr. 30, 2004).

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