Remover compositions for dual damascene system

Details Remover compositions for dual damascene system Remover compositions for dual damascene system

2005-05-02

2009-06-16

Webb, Gregory E (Department: 1796)

Cleaning compositions for solid surfaces, auxiliary compositions

Cleaning compositions or processes of preparing

For cleaning a specific substrate or removing a specific...

C134S001300

Reexamination Certificate

active

07547669

ABSTRACT:
A new remover chemistry based on a choline compound, such as choline hydroxide, is provided in order to address problems related to removal of residues, modified photoresists, photoresists, and polymers such as organic anti-reflective coatings and gap-fill and sacrificial polymers from surfaces involved in dual damascene structures without damaging the dielectrics and substrates involved therein. An etch stop inorganic layer at the bottom of a dual damascene structure may or may not be used to cover the underlying interconnect of copper. If not used, a process step of removing that protective layer can be avoided through a timed etch of the via in trench-first dual damascene processes.

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