Removal of transition metal ternary and/or quaternary...

Details Removal of transition metal ternary and/or quaternary... Removal of transition metal ternary and/or quaternary...

2008-05-13

2008-05-13

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S905000, C257SE21218, C257SE21310, C257SE21311

Reexamination Certificate

active

07371688

ABSTRACT:
A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

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Wei-Min Li, et al., “Deposition of WNxCyThin Films by ALCVD Method for Diffusion Barriers in Metallization”, Proceedings of the 5thIEEE International Interconnect Technology Conference, Burlingame, CA.

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