Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2001-02-27
2001-12-18
Powell, William A. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C134S002000, C134S026000, C134S036000, C134S031000, C216S088000, C252S079100, C252S079300, C252S079400, C252S079500, C438S745000, C438S753000
Reexamination Certificate
active
06331487
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to the field of removing polishing residue from a substrate. More particularly, the present invention relates to the field of removing polishing residue from a substrate using a supercritical fluid.
BACKGROUND OF THE INVENTION
Manufacture of semiconductor devices commonly employ a Chemical Mechanical Polishing (CMP) process to planarize a wafer surface. The CMP process removes top surface layers from a semiconductor wafer. The CMP process leaves a CMP residue of CMP chemicals and particles that is difficult and problematic to remove by current post-CMP cleaning methods. It is well known that the CMP residue predominantly remains in surface features on the wafer surface.
The current post-CMP cleaning methods require that the wafer surface be mechanically washed or brushed by a commercially available machine called a scrubber. The scrubber may employ heat or ultrasonic augmentation and typically requires immersion times of two to twenty minutes to achieve complete removal of the CMP residue from the wafer surface. Because the wafer surface is mechanically washed or brushed by the scrubber, the scrubber leaves defects or scratches in the wafer surface.
It is well known that, if some of the CMP residue remains in the surface features, performance of the semiconductor devices will be degraded. Additionally, it is well known that the cost of manufacturing a wafer of the semiconductor devices is proportional to the time employed for each processing step.
It would be advantageous to be able to remove the CMP residue without using the mechanical washing or brushing employed by the scrubber in order to reduce an amount of the defects and the scratches. Further, it would be advantageous to more effectively remove the CMP residue from the surface features on the wafer surface.
What is needed is a method of removing polishing residue that does not use the mechanical washing or brushing.
What is further needed is a method of removing polishing residue that is more effective than the mechanical washing or brushing in removing the polishing residue from the surface features.
What is additionally needed is a method of removing the polishing residue that is more efficient than the scrubber.
SUMMARY OF THE INVENTION
The present invention is a method of removing polishing residue from a surface of a semiconductor substrate. The semiconductor substrate, including the polishing residue on the surface, is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the solvent are maintained in contact with the semiconductor substrate until the polishing residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.
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Haverstock & Owens LLP
Powell William A.
Tokyo Electron Limited
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