Removal of photoresist and photoresist residue from...

Cleaning and liquid contact with solids – Apparatus – With plural means for supplying or applying different fluids...

Reexamination Certificate

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Details

C134S111000, C134S186000, C134S200000, C134S902000

Reexamination Certificate

active

06871656

ABSTRACT:
A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

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