Removal of inorganic anti-reflective coating using fluorine etch

Details Removal of inorganic anti-reflective coating using fluorine etch Removal of inorganic anti-reflective coating using fluorine etch

1998-12-18

2000-08-15

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438720, 438742, 438744, 216 79, H01L 2100

Patent

active

06103634&

ABSTRACT:
A method for fabricating semiconductor devices that allows for the integration of anti-reflective coatings into the fabrication process. A method for removing an inorganic anti-reflective coating is disclosed that includes the step of exposing the layer of inorganic anti-reflective coating to atomic fluorine. An asher is used to generate fluorine atoms from NF.sub.3 precursor gas. The NF.sub.3 precursor gas is mixed with an inert carrier such as helium. In one embodiment, sequential etch steps are performed in an asher so as to sequentially remove both a layer of photoresist and a layer of inorganic anti-reflective coating.

REFERENCES:
patent: 5387312 (1995-02-01), Keller et al.
patent: 6013582 (2000-01-01), Ionov et al.

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