Removal of detrimental metal ions from hydrofluoric acid solutio

Details Removal of detrimental metal ions from hydrofluoric acid solutio Removal of detrimental metal ions from hydrofluoric acid solutio

1993-06-17

1994-09-20

Lewis, Michael

Chemistry of inorganic compounds

Halogen or compound thereof

Hydrogen halide

423483, 423484, 75726, 156642, C01B 707

Patent

active

053487222

ABSTRACT:
The invention relates to the removal of detrimental metal ions represented by Cu ion from a hydrofluoric acid solution for use in the manufacturing of semiconductor devices to clean silicon wafer surfaces. The acid solution is brought into contact with silicon granules which are used for the adsorption of the detrimental metal ions. To enhance the adsorption power and the rate of adsorption, the silicon granules are treated in advance to deposit a metal which is lower in ionization tendency than silicon on the surface of each silicon granule so as to partly cover the silicon granule surface by the deposited metal. Particularly Au or Ag is suitable as the metal deposited on the silicon granules.

REFERENCES:
patent: 3117000 (1964-01-01), Schlain et al.
patent: 3884692 (1975-05-01), Griffith et al.
patent: 3902896 (1975-09-01), Borbely et al.
patent: 4952386 (1990-08-01), Davison et al.

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