Removal of copper oxides from integrated interconnects

Details Removal of copper oxides from integrated interconnects Removal of copper oxides from integrated interconnects

2006-08-01

2006-08-01

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S709000, C216S066000

Reexamination Certificate

active

07084067

ABSTRACT:
An apparatus and a method for photoreducing copper oxide layers from semiconductor wafers during the processes of forming interconnects in advanced IC manufacturing. The apparatus comprises a reaction chamber with a high intensity UV light source and a wafer holder in the chamber. The UV light source is made of arrays of microdischarge devices fabricated on a semiconductor wafer where each of the microdischarge devices has the structure of a hollow cathode. Multiple arrays of microdischarge devices can be assembled together to make a planar UV lamp so as to provide a sufficient area for the UV illumination. The wafer holder in the chamber is made rotatable for a better uniformity during the photoreduction process. A non-oxidizing gas is flowed into the chamber to prevent instant and subsequent oxidation on the copper surface.

REFERENCES:
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4871416 (1989-10-01), Fukuda et al.
patent: 5534312 (1996-07-01), Hill et al.
patent: 5686789 (1997-11-01), Schoenbach et al.
patent: 5736002 (1998-04-01), Allen et al.
patent: 5782986 (1998-07-01), Butterbaugh et al.
patent: 6194833 (2001-02-01), DeTemple et al.
patent: 6214707 (2001-04-01), Thakur et al.
patent: 6284050 (2001-09-01), Shi et al.
patent: 6326301 (2001-12-01), Venkatesan et al.
patent: WO 98/53480 (1998-11-01), None
El-Habachi et al., “Emission of excimer radiation from direct current, high pressure, hollow cathode discharges,” Appl. Phys. Lett. vol. 72, No. 1, Jan. 5, 1998, p. 22-24.
El-Habachi et al., “Generation of intense excimer radiation from high-pressure hollow cathode discharges,” Appl. Phys. Lett., vol. 73, No. 7, Aug. 17, 1998, p. 885-887.
Fleisch et al., “An XPS Study of the UV Photoreduction of Transistion and Noble Metal Oxides,” Applied Surface Science, vol. 26, 1986, p. 488-497.
Fleisch et al., “Reduction of Copper Oxides By UV Radiation And Atomic Hydrogen Studied By XPS,” (Abstract) Application of Surface Science, vol. 10, No. 1, Jan.-Feb. 1982, p. 51-62.
Frame et al., “Microdischarge devices fabricated in silicon,” Appl. Phys. Lett., vol. 71, No. 9, Sep. 1, 1997, p. 1165-1167.
Kogelshatz et al., “Silent-discharge driven excimer UV sources and their application,” Appl. Surf. Sci., vol. 54, 1992, p. 410-497.
Ryan et al., “Copper interconnects for advanced logic and DRAM,” IEDM Digest, 1998, p. 258-259.
Schoenbach et al., “Microhollow cathode discharges,” Appl. Phys. Lett. vol. 68, No. 1 Jan. 1, 1996, p. 13-15.
Zhang et al., “Efficient excimer ultraviote sources from a dielectric barrier discharge in rare-gas/halogen mixtures,” J. Appl. Phys. vol. 80, Issue 2, Jul. 15, 1996, pp. 633-638.

Affiliated with

Also associated with

Rating

Removal of copper oxides from integrated interconnects does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Removal of copper oxides from integrated interconnects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Removal of copper oxides from integrated interconnects will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3679712