Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-06-20
2006-06-20
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S693000, C134S001200, C134S001300
Reexamination Certificate
active
07064070
ABSTRACT:
A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.
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de Leeuwe Marc
Mullee William H.
Palmer Bentley J.
Roberson, Jr. Glenn A.
Haverstock & Owens LLP
Tokyo Electron Limited
Vinh Lan
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