Removal of CMP and post-CMP residue from semiconductors...

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S692000, C438S693000, C134S001200, C134S001300

Reexamination Certificate

active

07064070

ABSTRACT:
A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.

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