Removal method of organic matter and system for the same

Details Removal method of organic matter and system for the same Removal method of organic matter and system for the same

1995-08-25

1998-05-05

Dang, Thi

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438906, 134 13, H01L 2100

Patent

active

057473870

ABSTRACT:
According to the present invention, the surface of the sample is cleaned with water immediately after ashing of the resist the quality of which has been changed through ion implantation by ozone-containing gas, or ozone-containing gas and ultraviolet ray, or the sample is cleaned with water without being exposed to the atmosphere after ashing, thereby allowing the number of residues to be reduced to 1/100, decreasing the load in cleaning process by solution, cutting down the semiconductor device production cost and improving the semiconductor device productivity.

REFERENCES:
patent: 4341592 (1982-07-01), Shortes et al.
patent: 5007981 (1991-04-01), Kawasaki et al.
patent: 5135608 (1992-08-01), Okutani
patent: 5171393 (1992-12-01), Moffat
patent: 5198634 (1993-03-01), Mattson et al.
The Hitachi Hyoron vol. 73, No. 9 (1991) pp. 37-42.

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