Removal method of organic matter and system for the same

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438906, 134 13, H01L 2100

Patent

active

057473870

ABSTRACT:
According to the present invention, the surface of the sample is cleaned with water immediately after ashing of the resist the quality of which has been changed through ion implantation by ozone-containing gas, or ozone-containing gas and ultraviolet ray, or the sample is cleaned with water without being exposed to the atmosphere after ashing, thereby allowing the number of residues to be reduced to 1/100, decreasing the load in cleaning process by solution, cutting down the semiconductor device production cost and improving the semiconductor device productivity.

REFERENCES:
patent: 4341592 (1982-07-01), Shortes et al.
patent: 5007981 (1991-04-01), Kawasaki et al.
patent: 5135608 (1992-08-01), Okutani
patent: 5171393 (1992-12-01), Moffat
patent: 5198634 (1993-03-01), Mattson et al.
The Hitachi Hyoron vol. 73, No. 9 (1991) pp. 37-42.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Removal method of organic matter and system for the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Removal method of organic matter and system for the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Removal method of organic matter and system for the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-53950

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.