Removal chemistry for selectively etching metal hard mask

Details Removal chemistry for selectively etching metal hard mask Removal chemistry for selectively etching metal hard mask

2009-01-23

2011-12-20

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S700000, C438S736000, C510S181000, C510S255000, C257SE21219, C257SE21245

Reexamination Certificate

active

08080475

ABSTRACT:
Embodiments of the present invention describe a removal chemistry for removing hard mask. The removal chemistry is a wet-etch solution that removes a metal hard mask formed on a dielectric layer, and is highly selective to a metal conductor layer underneath the dielectric layer. The removal chemistry comprises an aqueous solution of hydrogen peroxide (H2O2), a hydroxide source, and a corrosion inhibitor. The hydrogen peroxide and hydroxide source have the capability to remove the hard mask while the corrosion inhibitor prevents the metal conductor layer from chemically reacting with the hydrogen peroxide and hydroxide source during the hard mask removal.

REFERENCES:
patent: 2002/0031985 (2002-03-01), Wang et al.
patent: 2006/0135045 (2006-06-01), Bian et al.
patent: 2006/0169597 (2006-08-01), Liu et al.

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