Removable sidewall spacer for lightly doped drain formation usin

Details Removable sidewall spacer for lightly doped drain formation usin Removable sidewall spacer for lightly doped drain formation usin

1987-05-11

1988-05-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 29, 437 37, 437 44, 437149, 437154, 437247, 148DIG82, 148DIG106, 148DIG116, 357 42, 357 91, H01L 2126, H01L 21265, H01L 2122

Patent

active

047450860

ABSTRACT:
A method of using removable sidewall spacers to minimize the need for mask levels in forming lightly doped drains (LDDs) in the formation of CMOS integrated circuits. Aluminum or chemical vapor deposition (CVD) metals such as tungsten are suitable materials to form removable sidewall spacers which exist around CMOS gates during heavily doped source/drain region implants. Other materials such as CVD polysilicon may also be useful for the sidewall spacers. The sidewall spacers are removed before implantation of the lightly doped drain regions around the gates. This implanation sequence is exactly the reverse of what is currently practiced for lightly doped drain formation. The invention also includes the use of a differential oxide layer. A second set of disposable sidewall spacers or the use of permanent sidewall spacers form optional embodiments.

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