Fishing – trapping – and vermin destroying
Patent
1985-09-26
1988-02-02
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 44, 437 57, 437913, 437934, 437984, H01L 21265, H01L 21312, H01L 21302
Patent
active
047229098
ABSTRACT:
A method of using removable sidewall spacers to minimize the need for mask levels in forming lightly doped drains (LDDS) in the formation of CMOS integrated circuits. Aluminum or chemical vapor deposition (CVD) metals such as tungsten are suitable materials to form removable sidewall spacers which exist around CMOS gates during heavily doped source/drain region implants. Conformal materials such as CVD polysilicon may also be employed for this purpose. The sidewall spacers are removed before implantation of the lightly doped drain regions around the gates. This implantation sequence is exactly the reverse of what is currently practiced for lightly doped drain formation.
REFERENCES:
patent: 4422885 (1983-12-01), Brower et al.
patent: 4474624 (1984-10-01), Matthews
patent: 4480375 (1984-11-01), Cottrell
patent: 4488348 (1984-12-01), Jolly
patent: 4488351 (1984-12-01), Momose
patent: 4519126 (1985-05-01), Hsu
patent: 4525920 (1985-07-01), Jacobs et al.
patent: 4530150 (1985-07-01), Shirato
patent: 4536944 (1985-08-01), Bracco et al.
patent: 4561170 (1985-12-01), Doering et al.
patent: 4577391 (1986-03-01), Hsia et al.
patent: 4590663 (1986-05-01), Haken
patent: 4613882 (1986-09-01), Pimbley et al.
Kiyoto Watabe, "LDD Structure Using Polysilicon on Gate Sidewall", presented at 45th Japanese Applied Physics Conference Oct. 12-15, 1984.
Bassous et al., "Self-Aligned Polysilicon Gate MOSFETS with Tailored Source and Drain Profiles", IBM Tech. Discl. Bulletin, vol. 22, #11, 4/80 pp. 5146-5147.
Tsang et al., "Fabrication of High-Performance LDDFET's with Oxide Sidewall-Spacer Technology", IEEE Journal of Solid-State Circuits, vol. SC.-17, #2, 4/82.
Paul J. Tsang et al., "Fabrication of High-Performance LDDFET's with Oxide Sidewall-Spacer Technology," IEEE Journal of Solid-State Circuits, vol. SC-17, No. 2, Apr., 1982, pp. 220-226.
Cosentino Stephen J.
Mauntel Richard W.
Parrillo Louis C.
Fisher John A.
Hearn Brian E.
Mossman David L.
Motorola Inc.
Myers Jeffrey Van
LandOfFree
Removable sidewall spacer for lightly doped drain formation usin does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Removable sidewall spacer for lightly doped drain formation usin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Removable sidewall spacer for lightly doped drain formation usin will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1635720