Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1993-03-31
1995-05-09
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257448, 257459, 257466, 257442, 257623, H01L 2714, H01L 3100, H01L 3102
Patent
active
054142946
ABSTRACT:
A radiation detector includes a photovoltaic diode mesa structure (16) having of a plurality of sub-mesa structures (16a, 16b). Each of said sub-mesa structures includes a first layer (14a) of semiconductor material having a first type of electrical conductivity and a second layer (14b) having a second type of electrical conductivity such that a p-n junction is formed between the first and the second layers. Metalization (24) is disposed within a trench (30a) that runs between the sub-mesas and includes a tab portion (24a) that extends upwardly over a sidewall of each of said sub-mesa structures so as to electrically contact the second layer contained within each. As a result, each of said sub-mesa structures are electrically connected in parallel. The trench is disposed parallel to a radiation scan axis of the radiation detector and orthogonal to a radiation cross-scan axis of the radiation detector for reducing a width of surface features across the scan axis, thereby reducing a light signature of the detector.
REFERENCES:
patent: 5248884 (1993-09-01), Brewitt-Taylor et al.
Granneman Russell D.
McKeag William O.
Denson-Low W. K.
James Andrew J.
Kelley Nathan K.
Santa Barbara Research Center
Schubert W. C.
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